Selective deposition of silicon oxide

ABSTRACT

Methods and apparatuses for selectively depositing oxide on an oxide surface relative to a nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing oxide on an oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing oxide on an exposed nitride surface.

INCORPORATION BY REFERENCE

An Application Data Sheet is filed concurrently with this specificationas part of the present application. Each application that the presentapplication claims benefit of or priority to as identified in theconcurrently filed Application Data Sheet is incorporated by referenceherein in their entireties and for all purposes.

BACKGROUND

Semiconductor device fabrication includes fabrication ofmicroprocessors, logic, and memory devices. Such devices may befabricated using a variety of techniques, including self-alignedpatterning such as double patterning or quad patterning, gapfillprocesses, and other techniques. Some processes involve formation ofstructures that include silicon oxide and silicon nitride. Conventionaltechniques for forming such structures may be limited to patterningtechniques that include both etch and deposition.

SUMMARY

Provided herein are methods and apparatuses for processing semiconductorsubstrates. One aspect involves a method of depositing silicon oxideselectively on an exposed silicon oxide surface, the method including:providing a substrate having the exposed silicon oxide surface and anexposed silicon nitride surface, the exposed silicon nitride surfaceincluding primary amine groups; exposing the substrate to a aminosilaneto adsorb the aminosilane to the exposed silicon oxide surface; andperforming a thermal atomic layer deposition reaction including exposingthe substrate to an oxidizing agent, whereby the thermal atomic layerdeposition reaction selectively forms silicon oxide on the exposedsilicon oxide surface relative to the exposed silicon nitride surface.

In some embodiments, the method also includes prior to providing thesubstrate, depositing silicon nitride to form an untreated siliconnitride surface; and exposing the untreated silicon nitride surface toammonia and igniting a plasma for a duration between about 1 second andabout 10 seconds to form the exposed silicon nitride surface includingprimary amine groups. In some embodiments, the plasma is ignited using aplasma power between about 150 W and about 6000 W.

In some embodiments, the method also includes prior to providing thesubstrate, depositing silicon nitride to form an untreated siliconnitride surface and exposing the untreated silicon nitride surface to amixture of nitrogen and ammonia and igniting a plasma for a durationbetween about 1 second and about 10 seconds to form the exposed siliconnitride surface including primary amine groups. The plasma may beignited using a plasma power between about 150 W and about 6000 W. Insome embodiments, the amount of ammonia in the mixture of nitrogen andammonia is less than about 1% by volume. In some embodiments, themixture of ammonia gas and nitrogen gas includes a flow rate ratio ofammonia gas flow rate to nitrogen gas flow rate between about 0.01 andabout 0.1. In various embodiments, the ammonia gas flow rate is betweenabout 10 sccm and about 100 sccm.

In some embodiments, the method also includes forming the exposedsilicon nitride surface including primary amine groups by chemical vapordeposition at a deposition temperature greater than about 500° C.

In various embodiments, the thermal atomic layer deposition reaction isperformed at a deposition temperature between about 25° C. and about400° C.

In various embodiments, during the thermal atomic layer depositionreaction, the substrate is housed in a chamber having a chamber pressurebetween about 10 mTorr and about 10 Torr during selective deposition ofthe silicon oxide.

In some embodiments, exposing the substrate to the aminosilane precursorincludes flowing the aminosilane precursor at a flow rate between about1000 sccm and about 5000 sccm.

In various embodiments, exposing the substrate to the oxidizing agentincludes flowing the oxidizing agent at a flow rate between about 1000sccm and about 5000 sccm.

In some embodiments, the aminosilane precursor is any one ofmonoaminosilane, diaminosilane, triaminosilane, tetraaminosilane, andcombinations thereof.

The oxidizing agent may be any of ozone, water, peroxide, andcombinations thereof.

Another aspect involves an apparatus for processing semiconductorsubstrates, the apparatus including: at least one process chamberincluding a pedestal for holding a substrate; at least one outlet forcoupling to a vacuum; a plasma generator; one or more process gas inletscoupled to one or more aminosilane gas sources; one or more process gasinlets coupled to one or more nitrogen-containing gas sources; one ormore process gas inlets coupled to one or more oxidizing agent gassources; and a controller for controlling operations in the apparatus,including machine-readable instructions for: introducing anitrogen-containing gas to the process chamber and igniting a plasma toform a exposed silicon nitride surface including primary amine groups onthe substrate; introducing a aminosilane gas to adsorb the aminosilaneto an exposed silicon oxide surface of the substrate; and performing athermal atomic layer deposition reaction including introducing anoxidizing agent whereby the thermal atomic layer deposition reactionselectively forms silicon oxide on the exposed silicon oxide surfacerelative to the exposed silicon nitride surface.

In some embodiments, the one or more nitrogen-containing sourcesincludes an ammonia source and a nitrogen gas source, and thenitrogen-containing source includes a mixture of ammonia and nitrogenwhereby the amount of ammonia in the mixture of nitrogen and ammonia isless than about 1% by volume.

In some embodiments, at least one process chamber includes a firstprocess chamber for treating the substrate using a nitrogen-containingsource and plasma, and a second process chamber for introducing theaminosilane source and the oxidizing agent to form silicon oxide.

These and other aspects are described further below with reference tothe drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a process flow diagram depicting operations for a method inaccordance with disclosed embodiments.

FIGS. 2A-2D are schematic illustrations of substrates undergoingoperations described in accordance with certain disclosed embodiments.

FIG. 3 is a timing sequence diagram showing an example of cycles in amethod in accordance with certain disclosed embodiments.

FIG. 4 is a schematic diagram of an example process chamber forperforming disclosed embodiments.

FIG. 5 is a schematic diagram of an example process tool for performingdisclosed embodiments.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth toprovide a thorough understanding of the presented embodiments. Thedisclosed embodiments may be practiced without some or all of thesespecific details. In other instances, well-known process operations havenot been described in detail to not unnecessarily obscure the disclosedembodiments. While the disclosed embodiments will be described inconjunction with the specific embodiments, it will be understood that itis not intended to limit the disclosed embodiments.

Semiconductor fabrication processes often involve formation ofstructures that include silicon, silicon oxide, and silicon nitride. Forexample, some fabrication processes involve patterning techniques toform structures for microprocessors, logic, and/or memory devices. Forexample, multiple patterning methods include double and quad patterningtechniques to extend lithographic technology beyond its optical limits.Existing techniques for multiple patterning may involve deposition andetching of materials such as silicon oxide to form spacers as a mask forpatterning techniques. However, current techniques for forming suchstructures often involve deposition, followed by selective etchingtechniques.

Likewise, processes for forming self-aligned contacts and structuresincluding gap fill of silicon oxide involve deposition techniques thatare not selective to the type of substrate. Some current depositionmethods result in conformal deposition process at best, or process thatleads to a void formation in small features on a substrate.

Provided herein are methods of selectively depositing silicon oxide on asilicon oxide surface in the presence of an exposed silicon nitridesurface. Deposition techniques are selective to depositing silicon oxiderelative to silicon nitride by modulating the reactivity of the siliconnitride versus a silicon oxide surface to certain silicon-containingprecursors and reactants for forming silicon oxide. Techniques describedherein involve thermal atomic layer deposition (ALD). That is, invarious embodiments, the reaction between a silicon-containing precursorand an oxidizing agent to form silicon oxide is performed withoutigniting a plasma.

ALD is a technique that deposits thin layers of material usingsequential self-limiting reactions. Typically, an ALD cycle includesoperations to deliver and adsorb at least one reactant to the substratesurface, and then react the adsorbed reactant with one or more reactantsto form the partial layer of film. As an example, a silicon oxidedeposition cycle may include the following operations: (i)delivery/adsorption of a silicon-containing precursor, (ii) purging ofthe silicon precursor from the chamber, (iii) delivery of anoxygen-containing reactant or oxygen-containing gas, and (iv) purging ofthe oxygen-containing reactant from the chamber.

Unlike a chemical vapor deposition (CVD) technique, ALD processes usesurface-mediated deposition reactions to deposit films on alayer-by-layer basis. In one example of an ALD process, a substratesurface that includes a population of surface active sites is exposed toa gas phase distribution of a first precursor, such as asilicon-containing precursor, in a dose provided to a chamber housing asubstrate. Molecules of this first precursor are adsorbed onto thesubstrate surface, including chemisorbed species and/or physisorbedmolecules of the first precursor. It should be understood that when thecompound is adsorbed onto the substrate surface as described herein, theadsorbed layer may include the compound as well as derivatives of thecompound. For example, an adsorbed layer of a silicon-containingprecursor may include the silicon-containing precursor as well asderivatives of the silicon-containing precursor. After a first precursordose, the chamber is then evacuated to remove most or all of firstprecursor remaining in gas phase so that mostly or only the adsorbedspecies remain. In some implementations, the chamber may not be fullyevacuated. For example, the chamber may be evacuated such that thepartial pressure of the first precursor in gas phase is sufficiently lowto mitigate a reaction. A second reactant, such as an oxygen-containingreactant, is introduced to the chamber so that some of these moleculesreact with the first precursor adsorbed on the surface. In someprocesses, the second reactant reacts immediately with the adsorbedfirst precursor. The chamber may then be evacuated again to removeunbound second reactant molecules. As described above, in someembodiments the chamber may not be completely evacuated. Additional ALDcycles may be used to build film thickness.

In certain embodiments, an ALD first precursor dose partially saturatesthe substrate surface. In some embodiments, the dose phase of an ALDcycle concludes before the precursor contacts the substrate to evenlysaturate the surface. Typically, the precursor flow is turned off ordiverted at this point, and only purge gas flows. By operating in thissub-saturation regime, the ALD process reduces the cycle time andincreases throughput. However, because precursor adsorption is notsaturation limited, the adsorbed precursor concentration may varyslightly across the substrate surface. Examples of ALD processesoperating in the sub-saturation regime are provided in U.S. patentapplication Ser. No. 14/061,587 (now U.S. Pat. No. 9,355,839), filedOct. 23, 2013, titled “SUB-SATURATED ATOMIC LAYER DEPOSITION ANDCONFORMAL FILM DEPOSITION,” which is incorporated herein by reference inits entirety.

As described, in some implementations, the ALD methods include plasmaactivation. As described herein, the ALD methods and apparatusesdescribed herein may be conformal film deposition (CFD) methods, whichare described generally in U.S. patent application Ser. No. 13/084,399(now U.S. Pat. No. 8,728,956), filed Apr. 11, 2011, and titled “PLASMAACTIVATED CONFORMAL FILM DEPOSITION,” and in U.S. patent applicationSer. No. 13/084,305, filed Apr. 11, 2011, and titled “SILICON NITRIDEFILMS AND METHODS,” which are herein incorporated by reference in theirentireties.

FIG. 1 provides a process flow diagram depicting example operations of amethod performed in accordance with certain disclosed embodiments. Inoperation 102, a substrate having an exposed silicon oxide surface andexposed silicon nitride surface is provided to a process chamber. Theprocess chamber may be set to a chamber pressure between about 10 mTorrand about 10 Torr, or between about 1 Torr and about 3 Torr. Suchchamber pressures may be used throughout operations 102-114 as describedherein. The substrate may be heated to a substrate temperature betweenabout 25° C. and about 400° C., or between about 200° C. and about 300°C. It will be understood that substrate temperature as used hereinrefers to the temperature that the pedestal holding the substrate is setat and that in some embodiments, the substrate when provided to theprocess chamber on the pedestal may be heated to the desired substratetemperature prior to processing the substrate. The substrate temperaturemay be the same throughout operations 102-114 as described herein.

The substrate may be a silicon wafer, e.g., a 200-mm wafer, a 300-mmwafer, or a 450-mm wafer, including wafers having one or more layers ofmaterial, such as dielectric, conducting, or semi-conducting materialdeposited thereon. Non-limiting examples of under-layers includedielectric layers and conducting layers, e.g., silicon oxides, siliconnitrides, silicon carbides, metal oxides, metal nitrides, metalcarbides, and metal layers. In some embodiments, the substrate includessilicon oxide and silicon nitride, as shown in FIG. 2A. FIG. 2A shows asubstrate 200 having an exposed silicon oxide surface 203 and exposedsilicon nitride surfaces 202. The silicon oxide surface includeshydroxyl end groups, which may be formed from ambient air (H₂O and O₂)or from a mild etchant such as 1% hydrofluoric acid (HF) in H₂O. Thehydroxyl end groups on silicon oxide may also be formed due to thetechnique used to form the silicon oxide 203 material. Silicon nitridesurfaces 202 include Si—NH dimers, whereby nitrogen atoms are bonded toan adjacent nitrogen atom. Such a surface may form if the siliconnitride material is deposited using chemical vapor deposition at a lowtemperature, such as less than 500° C. However, such surfaces may besusceptible to reacting with silicon-containing precursors used fordepositing silicon oxide.

Thus, returning to FIG. 1, in operation 104, the substrate is optionallyexposed to ammonia and/or nitrogen plasma. As shown in FIG. 2B, when thesubstrate is exposed to ammonia and/or nitrogen plasma, the Si—NH dimersare converted to primary amine groups that include single —NH_(x)groups, which are not susceptible to reacting with thesilicon-containing precursors used in certain disclosed embodiments.Primary amine groups as referred to herein are defined as groups ofatoms where nitrogen is bonded to silicon and hydrogen and the nitrogenatom is not bound to another nitrogen atom. A primary amine group on thesurface of a silicon nitride substrate may have the structure Si—NH₂.Such groups are not susceptible to reacting with silicon-containingprecursors as described herein as the Si—N bond on the surface of thesilicon nitride is thermodynamically identical or at least similar tothe Si—N bond of the silicon-containing precursor. This prevents thesilicon nitride surface 202 from reacting with the silicon-containingprecursor, thereby preventing deposition of silicon oxide over thissurface.

Operation 104 of FIG. 1 is optional if the substrate having siliconoxide and silicon nitride already has silicon nitride surfaces withsingle —NH_(x) groups on the surface. For example, operation 104 isoptional if the silicon nitride is previously deposited using CVD at ahigh temperature of greater than 500° C., because silicon nitridedeposited using this technique and at these high temperatures are morelikely to yield single NH groups on the surface of the silicon nitridematerial, rather than forming dimers as shown in FIG. 2A.

For embodiments where operation 104 is performed, the substrate may beexposed to ammonia and/or nitrogen plasma for a duration between about 1second and about 10 seconds. Operation 104 may be performed at asubstrate temperature between about 25° C. and about 400° C., or betweenabout 200° C. and about 300° C. It will be understood that substratetemperature as used herein refers to the temperature that the pedestalholding the substrate is set at and that in some embodiments, thesubstrate when provided to the process chamber on the pedestal may beheated to the desired substrate temperature prior to processing thesubstrate. The substrate temperature during operation 104 may be thesame as during other operations as described herein with respect to FIG.1.

The chamber pressure during operation 104 may be between about 10 mTorrand about 10 Torr, or between about 1 Torr and about 3 Torr. The chamberpressure may be the same during operation 104 as during other operationsas described herein with respect to FIG. 1.

In various embodiments, operation 104 may involve exposing only toammonia plasma. For example, ammonia gas may be delivered to the processchamber and a plasma may be ignited.

Plasma energy may be provided to prepare the silicon nitride surface toform single amine groups on the surface of the silicon nitride. Plasmaenergy may be provided to activate ammonia into ions and radicals andother activated species, which react with silicon nitride amine dimersto form single amine groups. In various embodiments, the plasma is anin-situ plasma, such that the plasma is formed directly above thesubstrate surface in the chamber. The in-situ plasma may be ignited at apower per substrate area between about 0.2122 W/cm² and about 2.122W/cm². For example, the power may range from about 150 W to about 6000W, or from about 600 W to about 6000 W, or from about 800 W to about4000 W, for a chamber processing four 300 mm wafers. For example,plasmas may be generated by applying a radio frequency (RF) field to agas using two capacitively coupled plates. Ionization of the gas betweenplates by the RF field ignites the plasma, creating free electrons inthe plasma discharge region. These electrons are accelerated by the RFfield and may collide with gas phase reactant molecules. Collision ofthese electrons with reactant molecules may form radical species thatparticipate in the deposition process. It will be appreciated that theRF field may be coupled via any suitable electrodes. In variousembodiments, a high frequency plasma is used having a frequency of atleast about 13.56 MHz, or at least about 27 MHz, or at least about 40MHz, or at least about 60 MHz. In some embodiments, a microwave-basedplasma may be used. Non-limiting examples of electrodes include processgas distribution showerheads and substrate support pedestals. It will beappreciated that plasmas may be formed by one or more suitable methodsother than capacitive coupling of an RF field to a gas. In someembodiments, the plasma is a remote plasma, such that a second reactantis ignited in a remote plasma generator upstream of the chamber, thendelivered to the chamber where the substrate is housed. Ammonia gas maybe delivered to the process chamber at a flow rate between about 100sccm and about 10000 sccm, or between about 5000 sccm and about 7500sccm. In some embodiments, ammonia plasma may be generated in situ. Insome embodiments, ammonia plasma may be generated in a remote plasmagenerator.

In various embodiments, operation 104 may involve exposing to a plasmagenerated from a mixture of ammonia and nitrogen gas. Here, the plasmamay also be an in-situ or a remote plasma as described above. Forexample, ammonia gas and nitrogen gas may be delivered together as amixture or separately to the process chamber, whereby the gases may bemixed, and a plasma may then be ignited. The in-situ plasma may beignited at a power per substrate area between about 0.2122 W/cm² andabout 2.122 W/cm². For example, the power may range from about 150 W toabout 6000 W, or from about 600 W to about 6000 W, or from about 800 Wto about 4000 W, for a chamber processing four 300 mm wafers. In variousembodiments, a high frequency plasma is used having a frequency of atleast about 13.56 MHz, or at least about 27 MHz, or at least about 40MHz, or at least about 60 MHz. In some embodiments, a microwave-basedplasma may be used.

The mixture of ammonia gas and nitrogen gas delivered to the plasmasource may vary. For example, the ammonia to nitrogen gas flow rateratio may be between about 0.01 and about 0.1. Ammonia gas may bedelivered to the process chamber at a flow rate between about 10 sccmand about 100 sccm. Nitrogen gas may be delivered to the process chamberat a flow rate between about 100 sccm and about 10000 sccm. In someembodiments, the mixture of ammonia gas and nitrogen gas includes lessthan about 1% ammonia by volume.

In some embodiments, a carrier gas may be flowed during operation 104.The carrier gas may be an inert gas, such as helium, argon, neon, andcombinations thereof. The carrier gas may be diverted such that thecarrier gas is used to deliver the ammonia and/or nitrogen gas to theprocess chamber. In some embodiments, the carrier gas may be provided toassist with pressure and/or temperature control of the process chamber.In some embodiments, the carrier gas is used to ensure more rapiddelivery of a gas to the process chamber.

In operation 106, the substrate is exposed to an aminosilane to adsorbthe aminosilane onto the substrate surface. Aminosilanes referred toherein include aminosilanes, such as bis(tertbutyl)aminosilane andsilylamines such as trisilylamine. In some embodiments, aminosilanemolecules may adsorb onto both silicon oxide and silicon nitridesurfaces, but as described below with respect to operation 110, siliconoxide is formed selectively on silicon oxide surface and not on thesilicon nitride surface. In various embodiments, subsequent purgeoperations as described below with respect to operations 108 and 112 mayremove adsorbed aminosilane from the silicon nitride surface.

In some embodiments, adsorption on the surface of the substrate may beform a thin layer of the aminosilane on the surface of the substrate.The thin layer may be less than a monolayer, and may have a thicknessbetween about 0.2 Å and about 0.4 Å.

During operation 106, an inert gas may be flowed. The inert gas may beany inert gas, such as those listed above with respect to operation 104.The inert gas may be provided to assist with pressure and/or temperaturecontrol of the process chamber, evaporation of a liquid reactant, morerapid delivery of the reactant and/or as a sweep gas for removingprocess gases from the process chamber and/or process chamber plumbing.

The aminosilane used in operation 106 has a chemical formula as follows:

where x is an integer between and including 1 and 3, x+y=4 and each ofR₁ and R₂ is hydrogen or an alkyl ligand. For example, in someembodiments, the aminosilane is monoaminosilane, which has the chemicalstructure:H₃Si—NR₁R₂

where each of R₁ and R₂ is hydrogen or an alkyl ligand.

The aminosilane in some embodiments may be any of monoaminosilane,diaminosilane, triaminosilane, tetraaminosilane, and combinationsthereof. Chemical structures for these examples are provided below:

As noted above, R₁ and R₂ may be any alkyl ligand. In one example, theaminosilane may be N,N′-dimethylsilanediamine, having the structure:

Silicon alkoxides, such as tetraethyl orthosilicate (TEOS), siliconhalides, and silane (SiH₄) are not used as a silicon precursor fordepositing silicon oxide in accordance with disclosed embodiments asthese precursors are likely to react with the silicon nitride film andtherefore may be unable to selectively deposit silicon oxide on siliconoxide in the presence of silicon nitride.

Formation of a Si—O bond using aminosilanes as described herein isthermodynamically favorable using the Si—N bond present in theaminosilane. Further, as the Si—N bond in the aminosilane is anequivalent bond to the Si—N bond on the surface of the silicon nitridefilm present on the substrate, there is no driving force for theaminosilane to react with the silicon nitride film, which therebyprevents formation of silicon oxide on the silicon nitride film.

In operation 108, the process chamber is optionally purged to removeaminosilane that did not adsorb onto the substrate surface. Purging thechamber may involve flowing a purge gas or a sweep gas, which may be acarrier gas used in other operations or may be a different gas. In someembodiments, purging may involve evacuating the chamber. Example purgegases include argon, nitrogen, hydrogen, and helium. In someembodiments, operation 108 may include one or more evacuation subphasesfor evacuating the process chamber. Alternatively, it will beappreciated that operation 108 may be omitted in some embodiments.Operation 108 may have any suitable duration, such as between about 0seconds and about 60 seconds, for example about 0.01 seconds. In someembodiments, increasing a flow rate of one or more purge gases maydecrease the duration of operation 108. For example, a purge gas flowrate may be adjusted according to various reactant thermodynamiccharacteristics and/or geometric characteristics of the process chamberand/or process chamber plumbing for modifying the duration of operation108. In one non-limiting example, the duration of a purge phase may beadjusted by modulating purge gas flow rate. This may reduce depositioncycle time, which may improve substrate throughput. After a purge, theaminosilane molecules remain adsorbed onto the substrate surface. Insome embodiments, the aminosilane precursor is flowed to a chamberhousing the substrate at a flow rate between about 1000 sccm and about5000 sccm.

In operation 110, the substrate is exposed to an oxidizing agent withouta plasma to selectively form silicon oxide on a silicon oxide surface.In some embodiments, when the oxidizing agent is provided to thesubstrate, the adsorbed precursor reacts with the oxidizing agent toform silicon oxide on the surface of the silicon oxide surface. Incontrast, the silicon nitride surface having the same silicon-nitrogenbond as the aminosilane does not react at all or as quickly andtherefore, selective deposition is achieved. FIG. 2C shows an example ofthe substrate from FIG. 2B, whereby monoaminosilane reacts with thesurface of a silicon oxide surface, which exhibited silanol end groupsas shown in FIG. 2B. The reaction between the silanol end groups and themonoaminosilane is thermodynamically favorable to form an Si—O—Si bond,and reaction with an oxidizing agent thereby forms a silicon oxide asshown in FIG. 2D, which also forms silanol end groups. Such end groupsmay then be subject to further deposition in subsequent depositioncycles as further described below.

Returning to FIG. 1, in operation 110, the oxidizing agent may be anyone or more of the following gases: ozone, water, and peroxide. Thereaction between the aminosilane and the oxidizing agent is a thermalreaction such that plasma is not necessary to drive the reaction. Thus,oxygen and nitrous oxide are not used as oxidizing agents in disclosedembodiments as reactions for forming silicon oxide using an aminosilaneand oxygen or nitrous oxide involves igniting a plasma. In someembodiments, the oxidizing agent is flowed into a chamber housing thesubstrate at a flow rate between about 1000 sccm and about 5000 sccm.

In operation 112, the chamber is optionally purged to remove anyresidual byproducts. Operation 112 may be performed using any of theconditions described above with respect to operation 108.

In operation 114, it is determined whether the desired thickness of filmhas been deposited. If not, operations 106-112 are repeated insufficient cycles to deposit a desired thickness of silicon oxide filmselectively on silicon oxide relative to silicon nitride. Any suitablenumber of deposition cycles may be included in an ALD process to deposita desired film thickness of silicon oxide. For example, about fiftydeposition cycles may be performed to deposit a film on the substrateusing disclosed embodiments.

FIG. 3 is a timing sequence diagram of example pulses in accordance withdisclosed embodiments. FIG. 3 shows phases in an example ALD process300, for various process parameters, such as ammonia and/or nitrogen gasflow, carrier gas or purge gas flow, aminosilane precursor flow,oxidizing agent flow, and plasma status. The lines indicate when theflow is turned on and off and when the plasma is turned on and off.Various disclosed embodiments depend on process parameters that include,but are not limited to, flow rates for inert and reactant species, flowrates for nitrogen and/or ammonia pre-treatment gases, plasma conditionsduring pre-treatment, substrate temperature, and process chamberpressure.

Process 300 includes two deposition cycles: deposition cycle 310A anddeposition cycle 310B. Deposition cycle 310A includes silicon nitridepreparation phase 301A, whereby ammonia/nitrogen (NH₃/N₂) flow is turnedon and a plasma is on. Carrier gas flow may also be turned on, whilstaminosilane precursor and oxidizing agent flows are turned off. Thisphase may correspond to operation 104 of FIG. 1. Following siliconnitride surface preparation phase 301A, deposition cycle 310A includesaminosilane precursor exposure phase 357A, whereby carrier gas continuesto flow, aminosilane precursor gas flow is turned on, oxidizing agentflow remains off, plasma is turned off, and NH₃/N₂ gas flow is turnedoff. This phase may correspond to operation 106 of FIG. 1. During purgephase 359A, the carrier gas flow continues to flow to purge out excessaminosilane precursors remaining in gas phase, while aminosilaneprecursor, oxidizing agent, and NH₃/N₂ flows are turned off and theplasma is turned off. This may correspond to operation 108 of FIG. 1. Inoxidizing agent exposure phase 361A, carrier gas is flowed and oxidizingagent flow is turned on, while aminosilane precursor flow and NH₃/N₂flow are turned off. Plasma is likewise turned off during this phase.This phase may correspond to operation 110 of FIG. 1. Purge phase 363Aincludes carrier gas flow while aminosilane precursor flow, oxidizingagent flow, and NH₃/N₂ flow are turned off and the plasma is turned off.This may correspond to operation 112 of FIG. 1. Deposition cycle 310A isrepeated in deposition cycle 310B, which includes aminosilane precursorexposure phase 357B, purge phase 359B, oxidizing agent exposure phase361B, and purge phase 363B, each of which may involve the same gas flowsand plasma status as in aminosilane precursor exposure phase 357A, purgephase 359A, oxidizing agent exposure phase 361A, and purge phase 363A,respectively.

Apparatus

FIG. 4 depicts a schematic illustration of an embodiment of an atomiclayer deposition (ALD) process station 400 having a process chamber body402 for maintaining a low-pressure environment. A plurality of ALDprocess stations 400 may be included in a common low pressure processtool environment. For example, FIG. 5 depicts an embodiment of amulti-station processing tool 500. In some embodiments, one or morehardware parameters of ALD process station 400 including those discussedin detail below may be adjusted programmatically by one or more computercontrollers 450.

ALD process station 400 fluidly communicates with reactant deliverysystem 401 a for delivering process gases to a distribution showerhead406. Reactant delivery system 401 a includes a mixing vessel 404 forblending and/or conditioning process gases, such as an aminosilaneprecursor gas, or oxidizing agent gas (e.g., ozone), or ammonia and/ornitrogen gas, for delivery to showerhead 406. One or more mixing vesselinlet valves 420 may control introduction of process gases to mixingvessel 404. Nitrogen plasma and/or ammonia plasma may also be deliveredto the showerhead 406 or may be generated in the ALD process station400.

As an example, the embodiment of FIG. 4 includes a vaporization point403 for vaporizing liquid reactant to be supplied to the mixing vessel404. In some embodiments, vaporization point 403 may be a heatedvaporizer. The saturated reactant vapor produced from such vaporizersmay condense in downstream delivery piping. Exposure of incompatiblegases to the condensed reactant may create small particles. These smallparticles may clog piping, impede valve operation, contaminatesubstrates, etc. Some approaches to addressing these issues involvepurging and/or evacuating the delivery piping to remove residualreactant. However, purging the delivery piping may increase processstation cycle time, degrading process station throughput. Thus, in someembodiments, delivery piping downstream of vaporization point 403 may beheat traced. In some examples, mixing vessel 404 may also be heattraced. In one non-limiting example, piping downstream of vaporizationpoint 403 has an increasing temperature profile extending fromapproximately 100° C. to approximately 150° C. at mixing vessel 404.

In some embodiments, liquid precursor or liquid reactant may bevaporized at a liquid injector. For example, a liquid injector mayinject pulses of a liquid reactant into a carrier gas stream upstream ofthe mixing vessel. In one embodiment, a liquid injector may vaporize thereactant by flashing the liquid from a higher pressure to a lowerpressure. In another example, a liquid injector may atomize the liquidinto dispersed microdroplets that are subsequently vaporized in a heateddelivery pipe. Smaller droplets may vaporize faster than largerdroplets, reducing a delay between liquid injection and completevaporization. Faster vaporization may reduce a length of pipingdownstream from vaporization point 403. In one scenario, a liquidinjector may be mounted directly to mixing vessel 404. In anotherscenario, a liquid injector may be mounted directly to showerhead 406.

In some embodiments, a liquid flow controller (LFC) upstream ofvaporization point 403 may be provided for controlling a mass flow ofliquid for vaporization and delivery to process station 400. Forexample, the LFC may include a thermal mass flow meter (MFM) locateddownstream of the LFC. A plunger valve of the LFC may then be adjustedresponsive to feedback control signals provided by aproportional-integral-derivative (PID) controller in electricalcommunication with the MFM. However, it may take one second or more tostabilize liquid flow using feedback control. This may extend a time fordosing a liquid reactant. Thus, in some embodiments, the LFC may bedynamically switched between a feedback control mode and a directcontrol mode. In some embodiments, this may be performed by disabling asense tube of the LFC and the PID controller.

Showerhead 406 distributes process gases toward substrate 412. In theembodiment shown in FIG. 4, the substrate 412 is located beneathshowerhead 406 and is shown resting on a pedestal 408. Showerhead 406may have any suitable shape, and may have any suitable number andarrangement of ports for distributing process gases to substrate 412.

In some embodiments, pedestal 408 may be raised or lowered to exposesubstrate 412 to a volume between the substrate 412 and the showerhead406. It will be appreciated that, in some embodiments, pedestal heightmay be adjusted programmatically by a suitable computer controller 450.

In another scenario, adjusting a height of pedestal 408 may allow aplasma density to be varied during plasma activation cycles in theprocess in embodiments where a plasma is ignited. At the conclusion ofthe process phase, pedestal 408 may be lowered during another substratetransfer phase to allow removal of substrate 412 from pedestal 408.

In some embodiments, pedestal 408 may be temperature controlled viaheater 410. In some embodiments, the pedestal 408 may be heated to atemperature of at least about 250° C., or in some embodiments, less thanabout 300° C., such as about 250° C., during deposition of siliconnitride films as described in disclosed embodiments. In someembodiments, the pedestal is set at a temperature between about 50° C.and about 300° C., such as at a temperature between about 200° C. andabout 275° C. In some embodiments, the pedestal is set at a temperaturebetween about 50° C. and about 300° C. In some embodiments, the pedestalis set at a temperature between about 200° C. and about 275° C.

Further, in some embodiments, pressure control for process station 400may be provided by butterfly valve 418. As shown in the embodiment ofFIG. 4, butterfly valve 418 throttles a vacuum provided by a downstreamvacuum pump (not shown). However, in some embodiments, pressure controlof process station 400 may also be adjusted by varying a flow rate ofone or more gases introduced to the process station 400.

In some embodiments, a position of showerhead 406 may be adjustedrelative to pedestal 408 to vary a volume between the substrate 412 andthe showerhead 406. Further, it will be appreciated that a verticalposition of pedestal 408 and/or showerhead 406 may be varied by anysuitable mechanism within the scope of the present disclosure. In someembodiments, pedestal 408 may include a rotational axis for rotating anorientation of substrate 412. It will be appreciated that, in someembodiments, one or more of these example adjustments may be performedprogrammatically by one or more suitable computer controllers 450.

In some embodiments where plasma may be used as discussed above,showerhead 406 and pedestal 408 electrically communicate with a radiofrequency (RF) power supply 414 and matching network 416 for powering aplasma. In some embodiments, the plasma energy may be controlled bycontrolling one or more of a process station pressure, a gasconcentration, an RF source power, an RF source frequency, and a plasmapower pulse timing. For example, RF power supply 414 and matchingnetwork 416 may be operated at any suitable power to form a plasmahaving a desired composition of radical species. Examples of suitablepowers are about 150 W to about 6000 W. Plasma may be used duringtreatment of a silicon nitride surface prior to selective deposition ofsilicon oxide on silicon oxide relative to silicon nitride. RF powersupply 414 may provide RF power of any suitable frequency. In someembodiments, RF power supply 414 may be configured to control high- andlow-frequency RF power sources independently of one another. Examplelow-frequency RF frequencies may include, but are not limited to,frequencies between 0 kHz and 500 kHz. Example high-frequency RFfrequencies may include, but are not limited to, frequencies between 1.8MHz and 2.45 GHz, or greater than about 13.56 MHz, or greater than 27MHz, or greater than 40 MHz, or greater than 60 MHz. It will beappreciated that any suitable parameters may be modulated discretely orcontinuously to provide plasma energy for the surface reactions.

In some embodiments, the plasma may be monitored in-situ by one or moreplasma monitors. In one scenario, plasma power may be monitored by oneor more voltage, current sensors (e.g., VI probes). In another scenario,plasma density and/or process gas concentration may be measured by oneor more optical emission spectroscopy sensors (OES). In someembodiments, one or more plasma parameters may be programmaticallyadjusted based on measurements from such in-situ plasma monitors. Forexample, an OES sensor may be used in a feedback loop for providingprogrammatic control of plasma power. It will be appreciated that, insome embodiments, other monitors may be used to monitor the plasma andother process characteristics. Such monitors may include, but are notlimited to, infrared (IR) monitors, acoustic monitors, and pressuretransducers.

In some embodiments, instructions for a controller 450 may be providedvia input/output control (IOC) sequencing instructions. In one example,the instructions for setting conditions for a process phase may beincluded in a corresponding recipe phase of a process recipe. In somecases, process recipe phases may be sequentially arranged, so that allinstructions for a process phase are executed concurrently with thatprocess phase. In some embodiments, instructions for setting one or morereactor parameters may be included in a recipe phase. For example, afirst recipe phase may include instructions for setting a flow rate ofan inert and/or an ammonia and/or nitrogen reactant gas, instructionsfor setting a flow rate of a carrier gas (such as argon), instructionsfor igniting a plasma, and time delay instructions for the first recipephase. A second recipe phase may include instructions for setting a flowrate of an inert and/or aminosilane silicon precursor gas, instructionsfor setting a flow rate of a carrier gas (such as argon), and time delayinstructions for a second recipe phase. A third, subsequent recipe phasemay include instructions for modulating or stopping a flow rate of aninert and/or a reactant gas, and instructions for modulating a flow rateof a carrier or purge gas and time delay instructions for the thirdrecipe phase. A fourth recipe phase may include instructions formodulating a flow rate of an oxidizing agent gas such as ozone,instructions for modulating the flow rate of a carrier or purge gas, andtime delay instructions for the fourth recipe phase. A fifth, subsequentrecipe phase may include instructions for modulating or stopping a flowrate of an inert and/or a reactant gas, and instructions for modulatinga flow rate of a carrier or purge gas and time delay instructions forthe fifth recipe phase. It will be appreciated that these recipe phasesmay be further subdivided and/or iterated in any suitable way within thescope of the disclosed embodiments. In some embodiments, the controller450 may include any of the features described below with respect tosystem controller 550 of FIG. 5.

As described above, one or more process stations may be included in amulti-station processing tool. FIG. 5 shows a schematic view of anembodiment of a multi-station processing tool 500 with an inbound loadlock 502 and an outbound load lock 504, either or both of which mayinclude a remote plasma source. A robot 506 at atmospheric pressure isconfigured to move wafers from a cassette loaded through a pod 508 intoinbound load lock 502 via an atmospheric port 510. A wafer is placed bythe robot 506 on a pedestal 512 in the inbound load lock 502, theatmospheric port 510 is closed, and the load lock is pumped down. Wherethe inbound load lock 502 includes a remote plasma source, the wafer maybe exposed to a remote plasma treatment to treat the silicon nitridesurface in the load lock prior to being introduced into a processingchamber 514. Further, the wafer also may be heated in the inbound loadlock 502 as well, for example, to remove moisture and adsorbed gases.Next, a chamber transport port 516 to processing chamber 514 is opened,and another robot (not shown) places the wafer into the reactor on apedestal of a first station shown in the reactor for processing. Whilethe embodiment depicted in FIG. 5 includes load locks, it will beappreciated that, in some embodiments, direct entry of a wafer into aprocess station may be provided.

The depicted processing chamber 514 includes four process stations,numbered from 1 to 4 in the embodiment shown in FIG. 5. Each station hasa heated pedestal (shown at 518 for station 1), and gas line inlets. Itwill be appreciated that in some embodiments, each process station mayhave different or multiple purposes. For example, in some embodiments, aprocess station may be switchable between an ALD and plasma-enhanced ALDprocess mode. Additionally or alternatively, in some embodiments,processing chamber 514 may include one or more matched pairs of ALD andplasma-enhanced ALD process stations. While the depicted processingchamber 514 includes four stations, it will be understood that aprocessing chamber according to the present disclosure may have anysuitable number of stations. For example, in some embodiments, aprocessing chamber may have five or more stations, while in otherembodiments a processing chamber may have three or fewer stations.

FIG. 5 depicts an embodiment of a wafer handling system for transferringwafers within processing chamber 514. In some embodiments, waferhandling system may transfer wafers between various process stationsand/or between a process station and a load lock. It will be appreciatedthat any suitable wafer handling system may be employed. Non-limitingexamples include wafer carousels and wafer handling robots. FIG. 5 alsodepicts an embodiment of a system controller 550 employed to controlprocess conditions and hardware states of process tool 500. Systemcontroller 550 may include one or more memory devices 556, one or moremass storage devices 554, and one or more processors 552. Processor 552may include a CPU or computer, analog and/or digital input/outputconnections, stepper motor controller boards, etc.

In some embodiments, system controller 550 controls all of theactivities of process tool 500. System controller 550 executes systemcontrol software 558 stored in mass storage device 554, loaded intomemory device 556, and executed on processor 552. Alternatively, thecontrol logic may be hard coded in the controller 550. ApplicationsSpecific Integrated Circuits, Programmable Logic Devices (e.g.,field-programmable gate arrays, or FPGAs) and the like may be used forthese purposes. In the following discussion, wherever “software” or“code” is used, functionally comparable hard coded logic may be used inits place. System control software 558 may include instructions forcontrolling the timing, mixture of gases, gas flow rates, chamber and/orstation pressure, chamber and/or station temperature, wafer temperature,target power levels, RF power levels, substrate pedestal, chuck and/orsusceptor position, and other parameters of a particular processperformed by process tool 500. System control software 558 may beconfigured in any suitable way. For example, various process toolcomponent subroutines or control objects may be written to controloperation of the process tool components used to carry out variousprocess tool processes. System control software 558 may be coded in anysuitable computer readable programming language.

In some embodiments, system control software 558 may includeinput/output control (IOC) sequencing instructions for controlling thevarious parameters described above. Other computer software and/orprograms stored on mass storage device 554 and/or memory device 556associated with system controller 550 may be employed in someembodiments. Examples of programs or sections of programs for thispurpose include a substrate positioning program, a process gas controlprogram, a pressure control program, a heater control program, and aplasma control program.

A substrate positioning program may include program code for processtool components that are used to load the substrate onto pedestal 518and to control the spacing between the substrate and other parts ofprocess tool 500.

A process gas control program may include code for controlling gascomposition (e.g., aminosilane gases, and oxidizing agent gases,ammonia, nitrogen, carrier gases and/or purge gases as described herein)and flow rates and optionally for flowing gas into one or more processstations prior to deposition in order to stabilize the pressure in theprocess station. A pressure control program may include code forcontrolling the pressure in the process station by regulating, forexample, a throttle valve in the exhaust system of the process station,a gas flow into the process station, etc.

A heater control program may include code for controlling the current toa heating unit that is used to heat the substrate. Alternatively, theheater control program may control delivery of a heat transfer gas (suchas helium) to the substrate.

A plasma control program may include code for setting RF power levelsapplied to the process electrodes in one or more process stations inaccordance with the embodiments herein.

A pressure control program may include code for maintaining the pressurein the reaction chamber in accordance with the embodiments herein.

In some embodiments, there may be a user interface associated withsystem controller 550. The user interface may include a display screen,graphical software displays of the apparatus and/or process conditions,and user input devices such as pointing devices, keyboards, touchscreens, microphones, etc.

In some embodiments, parameters adjusted by system controller 550 mayrelate to process conditions. Non-limiting examples include process gascomposition and flow rates, temperature, pressure, plasma conditions(such as RF bias power levels), etc. These parameters may be provided tothe user in the form of a recipe, which may be entered utilizing theuser interface.

Signals for monitoring the process may be provided by analog and/ordigital input connections of system controller 550 from various processtool sensors. The signals for controlling the process may be output onthe analog and digital output connections of process tool 500.Non-limiting examples of process tool sensors that may be monitoredinclude mass flow controllers, pressure sensors (such as manometers),thermocouples, etc. Appropriately programmed feedback and controlalgorithms may be used with data from these sensors to maintain processconditions.

System controller 550 may provide program instructions for implementingthe above-described deposition processes. The program instructions maycontrol a variety of process parameters, such as DC power level, RF biaspower level, pressure, temperature, etc. The instructions may controlthe parameters to operate in-situ deposition of film stacks according tovarious embodiments described herein.

The system controller 550 will typically include one or more memorydevices and one or more processors configured to execute theinstructions so that the apparatus will perform a method in accordancewith disclosed embodiments. Machine-readable media containinginstructions for controlling process operations in accordance withdisclosed embodiments may be coupled to the system controller 550.

In some implementations, the system controller 550 is part of a system,which may be part of the above-described examples. Such systems caninclude semiconductor processing equipment, including a processing toolor tools, chamber or chambers, a platform or platforms for processing,and/or specific processing components (a wafer pedestal, a gas flowsystem, etc.). These systems may be integrated with electronics forcontrolling their operation before, during, and after processing of asemiconductor wafer or substrate. The electronics may be referred to asthe “controller,” which may control various components or subparts ofthe system or systems. The system controller 550, depending on theprocessing conditions and/or the type of system, may be programmed tocontrol any of the processes disclosed herein, including the delivery ofprocessing gases, temperature settings (e.g., heating and/or cooling),pressure settings, vacuum settings, power settings, radio frequency (RF)generator settings, RF matching circuit settings, frequency settings,flow rate settings, fluid delivery settings, positional and operationsettings, wafer transfers into and out of a tool and other transfertools and/or load locks connected to or interfaced with a specificsystem.

Broadly speaking, the system controller 550 may be defined aselectronics having various integrated circuits, logic, memory, and/orsoftware that receive instructions, issue instructions, controloperation, enable cleaning operations, enable endpoint measurements, andthe like. The integrated circuits may include chips in the form offirmware that store program instructions, digital signal processors(DSPs), chips defined as application specific integrated circuits(ASICs), and/or one or more microprocessors, or microcontrollers thatexecute program instructions (e.g., software). Program instructions maybe instructions communicated to the system controller 550 in the form ofvarious individual settings (or program files), defining operationalparameters for carrying out a particular process on or for asemiconductor wafer or to a system. The operational parameters may, insome embodiments, be part of a recipe defined by process engineers toaccomplish one or more processing steps during the fabrication of one ormore layers, materials, metals, oxides, silicon, silicon dioxide,surfaces, circuits, and/or dies of a wafer.

The system controller 550, in some implementations, may be a part of orcoupled to a computer that is integrated with, coupled to the system,otherwise networked to the system, or a combination thereof. Forexample, the system controller 550 may be in the “cloud” or all or apart of a fab host computer system, which can allow for remote access ofthe wafer processing. The computer may enable remote access to thesystem to monitor current progress of fabrication operations, examine ahistory of past fabrication operations, examine trends or performancemetrics from a plurality of fabrication operations, to change parametersof current processing, to set processing steps to follow a currentprocessing, or to start a new process. In some examples, a remotecomputer (e.g. a server) can provide process recipes to a system over anetwork, which may include a local network or the Internet. The remotecomputer may include a user interface that enables entry or programmingof parameters and/or settings, which are then communicated to the systemfrom the remote computer. In some examples, the system controller 550receives instructions in the form of data, which specify parameters foreach of the processing steps to be performed during one or moreoperations. It should be understood that the parameters may be specificto the type of process to be performed and the type of tool that thesystem controller 550 is configured to interface with or control. Thusas described above, the system controller 550 may be distributed, suchas by including one or more discrete controllers that are networkedtogether and working towards a common purpose, such as the processes andcontrols described herein. An example of a distributed controller forsuch purposes would be one or more integrated circuits on a chamber incommunication with one or more integrated circuits located remotely(such as at the platform level or as part of a remote computer) thatcombine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber ormodule, a deposition chamber or module, a spin-rinse chamber or module,a metal plating chamber or module, a clean chamber or module, a beveledge etch chamber or module, a physical vapor deposition (PVD) chamberor module, a chemical vapor deposition (CVD) chamber or module, an ALDchamber or module, an atomic layer etch (ALE) chamber or module, an ionimplantation chamber or module, a track chamber or module, and any othersemiconductor processing systems that may be associated or used in thefabrication and/or manufacturing of semiconductor wafers.

As noted above, depending on the process step or steps to be performedby the tool, the system controller 550 might communicate with one ormore of other tool circuits or modules, other tool components, clustertools, other tool interfaces, adjacent tools, neighboring tools, toolslocated throughout a factory, a main computer, another controller, ortools used in material transport that bring containers of wafers to andfrom tool locations and/or load ports in a semiconductor manufacturingfactory.

An appropriate apparatus for performing the methods disclosed herein isfurther discussed and described in U.S. patent application Ser. No.13/084,399 (now U.S. Pat. No. 8,728,956), filed Apr. 11, 2011, andtitled “PLASMA ACTIVATED CONFORMAL FILM DEPOSITION”; and Ser. No.13/084,305, filed Apr. 11, 2011, and titled “SILICON NITRIDE FILMS ANDMETHODS,” each of which is incorporated herein in its entireties.

The apparatus/process described herein may be used in conjunction withlithographic patterning tools or processes, for example, for thefabrication or manufacture of semiconductor devices, displays, LEDs,photovoltaic panels and the like. Typically, though not necessarily,such tools/processes will be used or conducted together in a commonfabrication facility. Lithographic patterning of a film typicallyincludes some or all of the following operations, each operation enabledwith a number of possible tools: (1) application of photoresist on aworkpiece, i.e., substrate, using a spin-on or spray-on tool; (2) curingof photoresist using a hot plate or furnace or UV curing tool; (3)exposing the photoresist to visible or UV or x-ray light with a toolsuch as a wafer stepper; (4) developing the resist so as to selectivelyremove resist and thereby pattern it using a tool such as a wet bench;(5) transferring the resist pattern into an underlying film or workpieceby using a dry or plasma-assisted etching tool; and (6) removing theresist using a tool such as an RF or microwave plasma resist stripper.

CONCLUSION

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, it will be apparent thatcertain changes and modifications may be practiced within the scope ofthe appended claims. It should be noted that there are many alternativeways of implementing the processes, systems, and apparatus of thepresent embodiments. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the embodiments arenot to be limited to the details given herein.

What is claimed is:
 1. A method comprising: providing a substrate havingan exposed oxide surface and an exposed nitride surface, the exposednitride surface comprising primary amine groups; exposing the substrateto an aminosilane to selectively adsorb the aminosilane to the exposedoxide surface relative to the exposed nitride surface to form anadsorbed aminosilane on the exposed oxide surface; and performing athermal atomic layer deposition reaction comprising exposing thesubstrate to an oxidizing agent to react with the adsorbed aminosilaneto form a material on the exposed oxide surface relative to the exposednitride surface.
 2. The method of claim 1, further comprising formingthe exposed nitride surface comprising primary amine groups by chemicalvapor deposition at a deposition temperature greater than about 500° C.3. The method of claim 1, wherein the thermal atomic layer depositionreaction is performed at a deposition temperature between about 25° C.and about 400° C.
 4. The method of claim 1, wherein, during the thermalatomic layer deposition reaction, the substrate is housed in a chamberhaving a chamber pressure between about 10 mTorr and about 10 Torrduring selective deposition of the material.
 5. The method of claim 1,wherein exposing the substrate to the aminosilane comprises flowing theaminosilane at a flow rate between about 1000 sccm and about 5000 sccm.6. The method of claim 1, wherein exposing the substrate to theoxidizing agent comprises flowing the oxidizing agent at a flow ratebetween about 1000 sccm and about 5000 sccm.
 7. The method of claim 1,wherein the aminosilane is selected from the group consisting ofmonoaminosilane, diaminosilane, triaminosilane, tetraaminosilane, andcombinations thereof.
 8. The method of claim 1, wherein the oxidizingagent is selected from the group consisting of ozone, water, peroxide,and combinations thereof.
 9. The method of claim 1, further comprising,prior to providing the substrate, depositing nitride to form anuntreated nitride surface; and exposing the untreated nitride surface toammonia and igniting a plasma for a duration between about 1 second andabout 10 seconds to form the exposed nitride surface comprising primaryamine groups.
 10. The method of claim 9, wherein the plasma is ignitedusing a plasma power between about 150 W and about 6000 W.
 11. Themethod of claim 1, further comprising, prior to providing the substrate,depositing nitride to form an untreated nitride surface and exposing theuntreated nitride surface to a mixture of nitrogen and ammonia andigniting a plasma for a duration between about 1 second and about 10seconds to form the exposed nitride surface comprising primary aminegroups.
 12. The method of claim 11, wherein the plasma is ignited usinga plasma power between about 150 W and about 6000 W.
 13. The method ofclaim 11, wherein mixture of ammonia gas and nitrogen gas includes aflow rate ratio of ammonia gas flow rate to nitrogen gas flow ratebetween about 0.01 and about 0.1.
 14. The method of claim 13, whereinthe ammonia gas flow rate is between about 10 sccm and about 100 sccm.15. The method of claim 1, wherein the material is formed by reactingthe oxidizing agent with the adsorbed aminosilane to form the material.